Charles E. and Emma H. Morrison Professor
PhD, Massachusetts Institute of Technology, 1956
Guggenheim Fellow
Fulbright Fellow
Alexander von Humboldt Fellow
Fellow, American Association for the Advancement of Science
Winner, First Medal of the Materials Research Society
Winner, First Magnetism Award of the International Union of Pure and Applied Research
Founding Editor in Chief and Emertus, Journal of Magnetism and Magnetic Materials
Professor Freeman's research interests lie in developing computational methods and programs for carrying out first-principles modeling/simulations of complex materials and phenomena. A pioneer in computational physics and computational materials science, his first-principles approaches (i.e., without adjustable parameters) based on the local density approximation, have provided a universal method for treating all materials. Applications of his FLAPW method are focused on the structural, electronic, magnetic, optical and mechanical properties of metals, semiconductors, insulators, large molecular clusters, complex bulk compounds and alloys, low-dimensional systems (surfaces, thin films and multilayers) and defects (impurities, vacancies, faults, grain boundaries and dislocations). Recent studies include transparent conducting oxides and topological insulators. Very recently he and his colleagues have parallelized the FLAPW code on the IBM SP4 computers and have demonstrated very good scaling with up to 1280 processors. Freeman is the 13th most cited physicist in the ISI listing of over 512,000 physicists worldwide.
Selected Publications
- H. S. Jin, J. H. Song, A. J. Freeman
Dirac cone engineering in Bi2Se3 thin films
Physical Review B, 83, 125319 (2011)
- H. S. Hin, J. H. Song, A. J. Freeman, M. G. Kanatzidis
Candidates for topological insulators: Pb-based chalcogenides series
Physical Review B, 83, 041202 (2011)
- K. Nakamura, R. Shimabukuro, Y. Fujiwara, T. Akiyama, T. Ito, A. J. Freeman
Giant Modification of the Magnetocrystalline Anisotropy in Transition-Metal Monolayers by an External Electric Field
Physical Review Letters, 102, 187201 (2009)
- S. Jin, Y. Yaang, J. E. Medvedeva, L. Wang, S. Li, N. Cortes, J. R. Ireland, A. W. Metz, J. Ni, M. C. Hersam, A. J. Freeman, T. J. Marks
Tuning the properties of transparent oxide conductors. Dopant ion size and electronic structure effects on CdO-based transparent conducting oxides. Ga- and In-doped CdO thin films grown by MOCVD
Chemistry of Materials, 20, 220-230 (2008)
- R. Saniz, B. barbiellini, P. M. Platzman, and A. J. Freeman
Physisorption of Positronium on Quartz Surfaces
Physical Review Letters 99, 096101-4 (2007)
- M. S. Park, S. H. Rhim, and A. J. Freeman AJ
Charge Compensation and Mixed Valency in LaAlO3/SrTiO3 Heterointerfaces Studied by the FLAPW Method
Physical Review B74, 205416 (2006)
- N. I. Medvedeva, Y. N. Gornostyrev, and A. J. Freeman
Electronic Origin of Solid Solution Softening in bcc Molybdenum Alloys
Physical Review Letters 94, 136402 (2005)
- J. E. Medvedeva, A. J. Freeman, X. Y. Cui, et al.
Half-Metallicity and Efficient Spin Injection in AlN/GaN : Cr(0001) Heterostructure
Physical Review Letters 94, 146602 (2005)
